Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).

A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operates what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips (e.g. chips for smart cards) with embedded FeRAMs. Fujitsu produced devices for Ramtron until 2010. Since 2010 Ramtron's fabricators have been TI (Texas Instruments) and IBM. Since at least 2001 Texas Instruments has collaborated with Ramtron to develop FeRAM test chips in a modified 130 nm process. In the fall of 2005, Ramtron reported that they were evaluating prototype samples of an 8-megabit FeRAM manufactured using Texas Instruments' FeRAM process. Fujitsu and Seiko-Epson were in 2005 collaborating in the development of a 180 nm FeRAM process. In 2012 Ramtron was acquired by Cypress Semiconductor. FeRAM research projects have also been reported at Samsung, Matsushita, Oki, Toshiba, Infineon, Hynix, Symetrix, Cambridge University, University of Toronto, and the Interuniversity Microelectronics Centre (IMEC, Belgium).
The Ferroelectric RAM Market report analyses the impact of COVID-19 on this industry. COVID-19 can affect the global market in 3 ways: by directly affecting production and demand, by creating supply chain and market disruption, and by its financial impact on enterprises and financial markets.

The report offers detailed coverage of Ferroelectric RAM industry and main market trends. The market research includes historical and forecast market data, demand, application details, price trends, and company shares of the leading Ferroelectric RAM by geography. The report splits the market size, by volume and value, on the basis of application type and geography.

The report forecast global Ferroelectric RAM market to grow to reach xxx Million USD in 2020 with a CAGR of xx% during the period 2021-2027.

First, this report covers the present status and the future prospects of the global Ferroelectric RAM market for 2015-2027.

Key Companies
Cypress Semiconductor
Fujitsu
Texas Instruments
IBM
Infineon

Ferroelectric RAM Market by Type
Serial Memory
Parallel Memory

At the same time, we classify Ferroelectric RAM according to the type, application by geography. More importantly, the report includes major countries market based on the type and application.
The report conveys the entirety of current realities about market definition, orders, applications, and commitment for the Ferroelectric RAM market that are basic to be victorious inside the market. The principle motivation behind this report is to give a development map with respect to the activities taken by central participants of the Ferroelectric RAM market like item dispatches, joint endeavors, propensities, consolidations, and acquisitions which is influencing the Ferroelectric RAM market undertaking in general and furthermore influencing the business, import, fare, income and CAGR values.

Regional Analysis
North America, Latin America, Asia-Pacific countries, Europe, India, China, and over twenty countries have been analyzed based on the different marketing elements such as manufacturing capacity, consumer base, productivity, and profit margin, and ease of business. It is observed that North America, in particular, will show impressive development during the estimated time frame in marketing development. Administration organizations and outsider managers are channelizing their efforts to make client-driven items that will add to the development of an efficient marketing scenario in these regions. As the significant parts of the market business would be all around the globe, Middle East, Africa, North America along with other Asia-Pacific nations shows a great prospect of developing a good market favorable environment.

The research provides answers to the following key questions:
• What is the estimated growth rate and market share and size of the Ferroelectric RAM market for the forecast period 2021 - 2027?
• What are the driving forces in the Ferroelectric RAM market for the forecast period 2021 - 2027?
• Who are the prominent market players and how have they gained a competitive edge over other competitors?
• What are the market trends influencing the progress of the Ferroelectric RAM industry worldwide?
• What are the major challenges and threats restricting the progress of the industry?
• What opportunities does the market hold for the prominent market players?

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